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HD60P03 Datasheet
Datasheet specifications
| Datasheet's name | HD60P03 |
|---|---|
| File size | 66.792 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet HD60P03 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: HL(Haolin Elec) HD60P03
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 60W
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1.7nF@15V
- Continuous Drain Current (Id): 50A
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 108pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,15A
- Package: TO-252
- Manufacturer: HL(Haolin Elec)
